The role of float zone silicon in integrated circuits is surveyed. The problem of oxygen thermal donors and their inhomogeneous distribution is predicted to be a critical issue.
Float zone space processing rationale
01.09.1981
Aufsatz (Konferenz)
Keine Angabe
Englisch
NTRS | 1981
|NTRS | 1980
|NTIS | 1980
|NTIS | 1981
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TIBKAT | 1976
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