Report describes measurements of common-emitter current gains (hFE) of advanced bipolar silicon transistors before, during, and after irradiation with 275-MeV bromine ions, 2.5-MeV electrons, and conductivity rays from cobalt-60 atoms.
Radiation Damage In Advanced Bipolar Transistors
NASA Tech Briefs ; 13 , 9
01.09.1989
Sonstige
Keine Angabe
Englisch
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