Proposed detector of photons of wavelengths in range of 30 to 200 micrometer made of alternating layers of lightly and heavily negatively doped germanium. Formed in sequence by conventional chemical-vapor deposition. Alternating-gradient structure enhances collection of photogenerated charge carriers while suppressing dark current, thus achieving high detectivity. Alternating layers of n+ and n- germanium provides high detectivity in far-infrared spectral region. Also possible to make similar structures with positive doping and with other semiconductors as silicon or gallium arsenide to obtain various spectral response.


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    Titel :

    Alternating-Gradient Photodetector For Far Infrared


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.11.1989



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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