Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.


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    Titel :

    Fast Magnetoresistive Random-Access Memory


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.04.1991



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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