High-gain AlxGa1-xAs/GaAs npn double heterojunction bipolar transistors developed for use as phototransistors in optoelectronic integrated circuits, especially in artificial neural networks. Transistors perform both photodetection and saturating-amplification functions of neurons. Good candidates for such application because structurally compatible with laser diodes and light-emitting diodes, detect light, and provide high current gain needed to compensate for losses in holographic optical elements.


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    Titel :

    High-Gain AlxGa1-xAs/GaAs Transistors For Neural Networks


    Beteiligte:
    Kim, Jae-Hoon (Autor:in) / Lin, Steven H. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.09.1991



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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