AlxGa1-xAs lasers of graded-index-of-refraction, separate-confinement-heterostructure, single-quantum-well type fabricated on silicon substrates by migration-enhanced molecular-beam epitaxy followed by metalorganic vapor-phase epitaxy. They are intermediate products of continuing effort to develop low-threshold-current, high-efficiency lasers for parallel optical interconnections between large-scale optoelectronic integrated circuits.


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    Titel :

    High-Power AlGaAs Quantum-Well Lasers On Si Substrates


    Beteiligte:
    Kim, Jae-Hoon (Autor:in) / Lang, Robert J. (Autor:in) / Radhakrishnan, Gouri (Autor:in) / Katz, Joseph (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.09.1991



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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