The utilization of space for materials processing is being expanded through a unique concept of epitaxial thin film growth in the ultra-vacuum of low earth orbit (LEO). This condition can be created in the wake of an orbiting space vehicle; and assuming that the vehicle itself does not pertub the environment, vacuum levels of better than 10 exp -14 torr can be attained. This vacuum environment has the capacity of greatly enhancing epitaxial thin film growth and will be the focus of experiments conducted aboard the Wake Shield Facility (WSF) currently being developed by the Space Vacuum Epitaxy Center (SVEC), Industry, and NASA.


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    Titel :

    Use of space ultra-vacuum for high quality semiconductor thin film growth


    Beteiligte:
    Ignatiev, A. (Autor:in) / Sterling, M. (Autor:in) / Sega, R. M. (Autor:in)

    Erscheinungsdatum :

    01.08.1992


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


    Thin Film Semiconductor Growth in the Ultra-Vacuum of Space

    Ignatiev, A. / International Astronomical Federation | British Library Conference Proceedings | 1998




    Thin Film Microelectronics Materials Production in the Vacuum of Space

    Ignatiev, A. / Sterling, M. / Horton, C. et al. | British Library Conference Proceedings | 1997