Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.


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    Titel :

    Silicon Holder For Molecular-Beam Epitaxy


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.09.1993



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


    Molecular-Beam-Epitaxy Program

    Sparks, Patricia D. | NTRS | 1988


    Molecular-beam epitaxy in space

    Arthur, J.R. | Tema Archiv | 1977


    Molecular-Beam Epitaxy Of IrSi3

    Lin, True-Lon | NTRS | 1991



    Delayed Shutters For Dual-Beam Molecular Epitaxy

    Grunthaner, Frank J. / Liu, John L. / Hancock, Bruce | NTRS | 1989