We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFIs due to upsets in peripheral circuits, including the sense amplifier.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Single-Event Effect Response of a Commercial ReRAM


    Beteiligte:
    Chen, Dakai (Autor:in) / Label, Kenneth A. (Autor:in) / Kim, Hak (Autor:in) / Phan, Anthony (Autor:in) / Wilcox, Edward (Autor:in) / Buchner, Stephen (Autor:in) / Khachatrian, Ani (Autor:in) / Roche, Nicolas (Autor:in)

    Kongress:

    Single Event Effects (SEE) Symposium and the Military and Aerospace Programmable Logic Devices (MAPLD) Workshop ; 2014 ; La Jolla, CA, United States


    Erscheinungsdatum :

    19.05.2014


    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




    Single-Event Effect Performance of a Commercial ReRAM

    Chen, Dakai / Kim, Hak S. / Phan, Anthony et al. | NTRS | 2014


    Single event effect testing of commercial Off-The-Shelf components

    Riaz, M. Hammad / Javed, A. / Ahsan, M. | IEEE | 2015


    Mit ReRAM und MRAM in eine schnellere Zukunft

    British Library Online Contents | 2013


    ReRAM-Based Intrinsically Secure Memory: A Feasibility Analysis

    Olexa, Nicholas / Jha, Rashmi / Mandal, Soumyajit et al. | IEEE | 2019


    Commercial devices in space-single event effects on Earth

    Fogarty, T. / You, Z. / Attia, J. et al. | AIAA | 1998