We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.
Radiation Effects of Commercial Resistive Random Access Memories
NASA Electronic Parts and Packaging (NEPP) Electronics Technology Workshop (ETW) ; 2014 ; Greenbelt, MD, United States
17.06.2014
Sonstige
Keine Angabe
Englisch
Optical Ring-Resonator Random-Access Memories
British Library Online Contents | 2008
|Optical Ring-Resonator Random-Access Memories
British Library Online Contents | 2008
|Optical Ring-Resonator Random-Access Memories
British Library Online Contents | 2008
|