We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.


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    Titel :

    Radiation Effects of Commercial Resistive Random Access Memories


    Beteiligte:
    Chen, Dakai (Autor:in) / LaBel, Kenneth A. (Autor:in) / Berg, Melanie (Autor:in) / Wilcox, Edward (Autor:in) / Kim, Hak (Autor:in) / Phan, Anthony (Autor:in) / Figueiredo, Marco (Autor:in) / Buchner, Stephen (Autor:in) / Khachatrian, Ani (Autor:in) / Roche, Nicolas (Autor:in)

    Kongress:

    NASA Electronic Parts and Packaging (NEPP) Electronics Technology Workshop (ETW) ; 2014 ; Greenbelt, MD, United States


    Erscheinungsdatum :

    17.06.2014


    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch






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