We report the development of Cd‐free buffers by atomic layer deposition for chalcopyrite‐based solar cells. Zn(O,S) buffer layers were prepared by atomic layer deposition on sequentially grown Cu(In,Ga)(Se,S) 2 absorbers from Bosch Solar CISTech GmbH. An externally certified efficiency of 16.1% together with an open circuit voltage of 612 mV were achieved on laboratory scale devices. Stability tests show that the behavior of the ALD‐Zn(O,S)‐buffered devices can be characterized as stable only showing a minor drift of the open circuit voltage and the fill factor. Copyright © 2015 John Wiley & Sons, Ltd. • Sequentially processed Cu(In,Ga)(Se,S)2 based solar cells with externally certified efficiencies exceeding 16% were achieved with atomic layer deposited Zn(O,S) buffers. • Efficiencies up to 13% were achieved with 30 × 30 cm 2 large area modules.• Stability tests show that heat treatment has a minor impact on the open circuit voltage of the devices, whereas the fill factor drift remains below 10%.


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    Titel :

    Above 16% efficient sequentially grown Cu(In,Ga)(Se,S)2‐based solar cells with atomic layer deposited Zn(O,S) buffers



    Erschienen in:

    Progress in photovoltaics ; 23 , 11 ; 1493-1500


    Erscheinungsdatum :

    2015




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch



    Klassifikation :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher