A novel bonding approach with an interface consisting of a metal and dielectric is developed, and a “pillar‐array” metal topology is proposed for minimal optical and electrical loss at the interface. This enables a fully lattice‐matched two‐terminal, four‐junction device that consists of an inverted top two‐junction (2J) cell with 1.85 eV GaInP/1.42 eV GaAs, and an upright lower 2J cell with ~1 eV GaInAsP/0.74 eV GaInAs aimed for concentrator applications. The fabrication process and simulation of the metal topology are discussed along with the results of GaAs/GaInAs 2J and (GaInP + GaAs)/GaInAs three‐junction bonded cells. Bonding‐related issues are also addressed along with optical coupling across the bonding interface. Copyright © 2014 John Wiley & Sons, Ltd. A novel bonding method for multijunction photovoltaic devices that allows integration of dissimilar material is presented and demonstrated. The bonding interface utilizes a metal and dielectric with “pillar‐array” topology to minimize optical and electrical loss. Process‐related damage were addressed along with results of various bonded devices including a bonded triple‐junction device with V oc  = 2.70 V, J sc  = 12.66 mA/cm 2 , fill factor = 83.0%, and efficiency = 28.39% under the 1‐sun American Society for Testing and Materials (ASTM) G173 direct spectrum.


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    Titel :

    Two‐terminal metal‐inter‐connected multijunction III–V solar cells



    Erschienen in:

    Progress in photovoltaics ; 23 , 5 ; 593-599


    Erscheinungsdatum :

    2015




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch



    Klassifikation :

    BKL:    53.36 Energiedirektumwandler, elektrische Energiespeicher




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