This paper describes progress made in adapting a chemical vapor deposition (CVD) method, using mostly organo-metallic (OM) sources, to deposit layers of gallium arsenide to form an efficient solar cell. The requirements of the layer deposition are discussed, as are the necessary cell process steps required to form a qualified space-use solar cell. The results obtained to date are summarized, along with some consideration.


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    Titel :

    Gallium Arsenide Solar Cell Vapor Phase (MOCVD) Technology


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:
    Iles, P. A. (Autor:in) / Yeh, Y. C. M. (Autor:in)

    Kongress:

    Aerospace Congress and Exposition ; 1984



    Erscheinungsdatum :

    01.10.1984




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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