High brightness and low-voltage-driven AC thin-film electroluminescent (ACTFEL) devices were prepared by molecular beam epitaxy (MBE) and their EL properties were compared with those of a vacuum deposited (VD) ACTFEL device. From the brightness-voltage curve, a threshold voltage of 45.5 V and a maximum brightness of 523 ft-L (5 kHz, 73.5 V) were obtained. Besides a luminance of 300 ft-L was achieved at 58.5 V when the device was operated with 5 kHz sinusoidal wave. These values were superior to those of a VD-prepared ACTFEL device. Therefore, it was suggested that MBE is one of the most effective techniques to obtain ACTFEL devices with high performances.


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    Titel :

    Low-Voltage and High-Brightness AC Thin-Film Electroluminescent Device Prepared by Molecular Beam Epitaxy


    Weitere Titelangaben:

    Sae Technical Papers


    Beteiligte:

    Kongress:

    SAE International Congress and Exposition ; 1988



    Erscheinungsdatum :

    01.02.1988




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch


    Schlagwörter :


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