0.1 mu m InGaAs/InAlAs/InP HEMT MMIC technology on 3- inch InP substrates has been qualified in the categories of three-temperature lifetest, gamma radiation, RF survivability, electrostatic discharge, via-hole baking, and H2 poisoning. The three-temperature lifetest (T1 = 215 degrees C, T2 = 230 degrees C and T3 = 250 degrees C) of 0.1 mu m InGaAs/InAlAs/InP HEMT MMICs in a N2 ambient demonstrates an activation energy (Ea) as high as 1.9 eV, achieving a projected median-time-to-failure (MTF) approximately= 1x108 hours at a 125 degrees C junction temperature. Gamma radiation up to 5 mega RAD dose does not induce any degradation of DC/RF characteristics. Electrostatic discharge (ESD) shows destructive voltage up to 100 Volts. Furthermore, 0.1 mu m InP HEMTs exhibit less sensitivity to H2 exposure than 0.1 mu m GaAs pseudomorphic HEMTs. The qualification results demonstrate the readiness of 0.1 mu m InGaAs/InAlAs/InP MMICs technology for flight applications.


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    Titel :

    0.1 mu m InGaAs/InAlAs/InP HEMT MMICs - a flight qualified technology


    Beteiligte:
    Chou, Y.C. (Autor:in) / Leung, D. (Autor:in) / Lai, R. (Autor:in) / Grundbacher, R. (Autor:in) / Barsky, M. (Autor:in) / Kan, Q. (Autor:in) / Tsai, R. (Autor:in) / Eng, D. (Autor:in) / Wojtowicz, M. (Autor:in) / Block, T. (Autor:in)


    Erscheinungsdatum :

    2002


    Format / Umfang :

    4 Seiten, 15 Quellen




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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