0.1 mu m InGaAs/InAlAs/InP HEMT MMIC technology on 3- inch InP substrates has been qualified in the categories of three-temperature lifetest, gamma radiation, RF survivability, electrostatic discharge, via-hole baking, and H2 poisoning. The three-temperature lifetest (T1 = 215 degrees C, T2 = 230 degrees C and T3 = 250 degrees C) of 0.1 mu m InGaAs/InAlAs/InP HEMT MMICs in a N2 ambient demonstrates an activation energy (Ea) as high as 1.9 eV, achieving a projected median-time-to-failure (MTF) approximately= 1x108 hours at a 125 degrees C junction temperature. Gamma radiation up to 5 mega RAD dose does not induce any degradation of DC/RF characteristics. Electrostatic discharge (ESD) shows destructive voltage up to 100 Volts. Furthermore, 0.1 mu m InP HEMTs exhibit less sensitivity to H2 exposure than 0.1 mu m GaAs pseudomorphic HEMTs. The qualification results demonstrate the readiness of 0.1 mu m InGaAs/InAlAs/InP MMICs technology for flight applications.
0.1 mu m InGaAs/InAlAs/InP HEMT MMICs - a flight qualified technology
2002
4 Seiten, 15 Quellen
Aufsatz (Konferenz)
Englisch
Aluminiumverbindung , elektrostatische Entladung , Fehleranalyse , Galliumarsenid , HEMT (High Electron Mobility Transistor) , Drei-Fünf-Verbindung , Indiumverbindung , integrierte Schaltung , Zuverlässigkeit , Prüfung integrierter Schaltungen , Lebensdauerprüfung , Gamma-Strahlung , Aktivierungsenergie , Indiumaluminiumarsenid , Indiumgalliumarsenid , 100-Nanometer-Bereich
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