In this paper the authors have presented measurement results of the bandgap voltage references implemented in two different IBM BiCMOS SiGe technologies, over a very wide temperature range (-263 deg C to 27 deg C ). Both first-order and curvature-compensated bandgap voltage reference topologies were investigated. All the circuits function, even at deep cryogenic temperatures, are presented. Between the two technologies, bandgap voltage references designed in the scaled technology were more stable across temperature. The results presented here suggest that SiGe BiCMOS technology is an ideal candidate for emerging space exploration applications.


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    Titel :

    Cryogenic operation of SiGe BiCMOS voltage references


    Weitere Titelangaben:

    Tieftemperaturbetrieb von SiGe-BiCMOS-Spannungsreferenzen


    Beteiligte:


    Erscheinungsdatum :

    2006


    Format / Umfang :

    6 Seiten, 7 Bilder, 2 Tabellen, 8 Quellen


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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