It has been demonstrated that the radiation damage factors of GaAs-based QW laser diodes and LEDs reported to date obey a similar relationship with non-ionizing energy deposition as GaAs-based JFETs and resistors. In many cases, these appear to be similar to those reported for older injection diodes. Therefore, the relative radiation tolerance of new GaAs-based optoelectronic devices may be estimated by evaluating the damage factor with exposure to a single particle species and energy.
Survivability of quantum-well optoelectronic devices for space applications
Überlebensfähigkeit von optoelektronischen Quantentopf-Bauelementen für Raumfahrtanwendungen
1994
6 Seiten, 7 Bilder, 25 Quellen
Aufsatz (Konferenz)
Englisch
Laser Induced Quantum Well Intermixing for Optoelectronic Devices
British Library Conference Proceedings | 1996
|Lateral Carrier Sweep-Out in Multi-Quantum Well Optoelectronic Devices
British Library Conference Proceedings | 1995
|Quantum dot optoelectronic devices
IEEE | 2005
|Quantum Dot Optoelectronic Devices (Invited)
British Library Conference Proceedings | 2005
|