It has been demonstrated that the radiation damage factors of GaAs-based QW laser diodes and LEDs reported to date obey a similar relationship with non-ionizing energy deposition as GaAs-based JFETs and resistors. In many cases, these appear to be similar to those reported for older injection diodes. Therefore, the relative radiation tolerance of new GaAs-based optoelectronic devices may be estimated by evaluating the damage factor with exposure to a single particle species and energy.


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    Titel :

    Survivability of quantum-well optoelectronic devices for space applications


    Weitere Titelangaben:

    Überlebensfähigkeit von optoelektronischen Quantentopf-Bauelementen für Raumfahrtanwendungen


    Beteiligte:
    Evans, B.D. (Autor:in)


    Erscheinungsdatum :

    1994


    Format / Umfang :

    6 Seiten, 7 Bilder, 25 Quellen




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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