Power integrated circuit (IC) processes are discussed with an emphasis on a bipolar power IC process developed by Texas Instruments. This power technology offers advantages in ruggedness, flexibility, and cost over other processes. The power device closely resembles a conventional single diffused bipolar power transistor. A comparison of safe operating area characteristics of several current power IC technologies is given to demonstrate the advantage of bulk epitaxial devices over the more common power IC surface device types. The rugged N-P-N bipolar output transistors are capable of delivering high current (in excess of 20 A) and high voltage (up to 500 V) simultaneously.


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    Titel :

    Automotive power integrated circuit processes


    Weitere Titelangaben:

    Automative Leistungs-IC-Prozesse


    Beteiligte:
    Latham, L.F. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1989


    Format / Umfang :

    3 Seiten, 4 Quellen


    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




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