Many fundamental optical properties of InGaN have not yet been fully understood. Several researchers reported that the emission results mainly from recombination of excitons localized at certain potential minima originating from InGaN compositional fluctuations. In this work, we have employed photoluminescence (PL), photoreflectance (PR), and time-resolved photoluminescence (TRPL) measurements to study the mechanisms of optical transitions in InGaN-GaN double heterostructures.
Optical properties of InGaN/GaN double heterostructures
01.01.1999
132847 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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