Many fundamental optical properties of InGaN have not yet been fully understood. Several researchers reported that the emission results mainly from recombination of excitons localized at certain potential minima originating from InGaN compositional fluctuations. In this work, we have employed photoluminescence (PL), photoreflectance (PR), and time-resolved photoluminescence (TRPL) measurements to study the mechanisms of optical transitions in InGaN-GaN double heterostructures.


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    Titel :

    Optical properties of InGaN/GaN double heterostructures


    Beteiligte:
    Mee Yi Ryu, (Autor:in) / Eun-Joo Shin, (Autor:in) / Jae Ho Song, (Autor:in) / Sung Woong Park, (Autor:in) / Phil Won Yu, (Autor:in) / Nam Woong Song, (Autor:in) / Joo In Lee, (Autor:in) / Dongho Kim, (Autor:in) / Eun Soon Oh, (Autor:in) / Yong Jo Park, (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    132847 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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