The laser structures investigated in this study are MQW structures that have been processed into ridge waveguide Fabry-Perot devices. We have characterized the AlGaInAs system in term of the transparency current density, effective diffusion length, internal absorption, loss and efficiency, and differential gain.
Temperature performance of AlGaInAs semiconductor lasers
01.01.2001
174570 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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