The laser structures investigated in this study are MQW structures that have been processed into ridge waveguide Fabry-Perot devices. We have characterized the AlGaInAs system in term of the transparency current density, effective diffusion length, internal absorption, loss and efficiency, and differential gain.


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    Titel :

    Temperature performance of AlGaInAs semiconductor lasers


    Beteiligte:
    O'Brien, D. (Autor:in) / McInerney, J.G. (Autor:in) / White, J.K. (Autor:in) / Evans, J. (Autor:in) / SpringThorpe, A.J. (Autor:in)


    Erscheinungsdatum :

    01.01.2001


    Format / Umfang :

    174570 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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