Summary form only given. It is highly desirable to develop techniques for the monolithic integration of InGaAs photodiodes operating in the 1.0-1.6-/spl mu/m wavelength range with AlGaAs-GaAs-based optoelectronic and electronic devices for WDM applications. For very high-speed device applications, air-bridge coplanar metal waveguides can efficiently reduce the parasitic capacitance of diodes. In this paper, we report a novel air-bridges connected InGaAs detector on top of an AlGaAs-GaAs waveguide substrate with its monolithic WDM receiver module applications.


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    Title :

    InGaAs/InP/AlGaAs/GaAs p-i-n photodetector array with low capacitance air-bridge coplanar metal waveguides and its monolithic WDM applications


    Contributors:
    Hsu, S.-H. (author) / Tabatabaei, S.A. (author) / Agarwala, S. (author) / Johnson, F.G. (author) / Hrynlewicz, J.V. (author) / Cho, P. (author) / Chen, Y.J. (author) / Stone, D.R. (author)


    Publication date :

    1998-01-01


    Size :

    332743 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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