We have fabricated a monolithic Opto-electronic Integrated Circuit (OEIC) comprising of an InGaAs PIN photodetector and a Common Gate Amplifier (CGA) using Metamorphic High Electron Mobility Transistors (MHEMTs) on 4 inch GaAs substrates. The OEIC shows a gain of 28 dB at 28 GHz with an 8 GHz FWHM.


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    Title :

    Monolithic InGaAs PIN photodetector-GaAs MHEMT amplifier OEIC fabrication and implementation for 28 GHz LMDS applications


    Contributors:
    Joshi, (author) / Xinde Wang, (author) / Becker, (author) / Mohr, (author)


    Publication date :

    2002-01-01


    Size :

    167618 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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