Summary form only given. It is highly desirable to develop techniques for the monolithic integration of InGaAs photodiodes operating in the 1.0-1.6-/spl mu/m wavelength range with AlGaAs-GaAs-based optoelectronic and electronic devices for WDM applications. For very high-speed device applications, air-bridge coplanar metal waveguides can efficiently reduce the parasitic capacitance of diodes. In this paper, we report a novel air-bridges connected InGaAs detector on top of an AlGaAs-GaAs waveguide substrate with its monolithic WDM receiver module applications.


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    Titel :

    InGaAs/InP/AlGaAs/GaAs p-i-n photodetector array with low capacitance air-bridge coplanar metal waveguides and its monolithic WDM applications


    Beteiligte:
    Hsu, S.-H. (Autor:in) / Tabatabaei, S.A. (Autor:in) / Agarwala, S. (Autor:in) / Johnson, F.G. (Autor:in) / Hrynlewicz, J.V. (Autor:in) / Cho, P. (Autor:in) / Chen, Y.J. (Autor:in) / Stone, D.R. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    332743 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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