Summary form only given. It is highly desirable to develop techniques for the monolithic integration of InGaAs photodiodes operating in the 1.0-1.6-/spl mu/m wavelength range with AlGaAs-GaAs-based optoelectronic and electronic devices for WDM applications. For very high-speed device applications, air-bridge coplanar metal waveguides can efficiently reduce the parasitic capacitance of diodes. In this paper, we report a novel air-bridges connected InGaAs detector on top of an AlGaAs-GaAs waveguide substrate with its monolithic WDM receiver module applications.
InGaAs/InP/AlGaAs/GaAs p-i-n photodetector array with low capacitance air-bridge coplanar metal waveguides and its monolithic WDM applications
01.01.1998
332743 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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