Semiconductor lasers emitting at 1.3 /spl mu/m are important light sources for optical communication systems. We previously reported on 1.3 /spl mu/m GaInAsP-InP tensile-strained QW lasers emitting at 1.3 /spl mu/m with low threshold current density. In this paper, we report low threshold buried heterostructure (BH) lasers.


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    Title :

    Low threshold 1.3 /spl mu/m-GaInAsP/InP tensile-strained quantum well lasers with buried heterostructure


    Contributors:
    Yokouchi, N. (author) / Yamanaka, N. (author) / Iwai, N. (author) / Kasukawa, A. (author)


    Publication date :

    1995-01-01


    Size :

    162467 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Low Threshold 1.3um-GaInAsP/InP Tensile-Strained Quantum Well Lasers with Buried Heterostructure

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995




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