Semiconductor lasers emitting at 1.3 /spl mu/m are important light sources for optical communication systems. We previously reported on 1.3 /spl mu/m GaInAsP-InP tensile-strained QW lasers emitting at 1.3 /spl mu/m with low threshold current density. In this paper, we report low threshold buried heterostructure (BH) lasers.
Low threshold 1.3 /spl mu/m-GaInAsP/InP tensile-strained quantum well lasers with buried heterostructure
1995-01-01
162467 byte
Conference paper
Electronic Resource
English
Low Threshold 1.3um-GaInAsP/InP Tensile-Strained Quantum Well Lasers with Buried Heterostructure
British Library Conference Proceedings | 1995
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