Semiconductor lasers emitting at 1.3 /spl mu/m are important light sources for optical communication systems. We previously reported on 1.3 /spl mu/m GaInAsP-InP tensile-strained QW lasers emitting at 1.3 /spl mu/m with low threshold current density. In this paper, we report low threshold buried heterostructure (BH) lasers.


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    Titel :

    Low threshold 1.3 /spl mu/m-GaInAsP/InP tensile-strained quantum well lasers with buried heterostructure


    Beteiligte:
    Yokouchi, N. (Autor:in) / Yamanaka, N. (Autor:in) / Iwai, N. (Autor:in) / Kasukawa, A. (Autor:in)


    Erscheinungsdatum :

    01.01.1995


    Format / Umfang :

    162467 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Low Threshold 1.3um-GaInAsP/InP Tensile-Strained Quantum Well Lasers with Buried Heterostructure

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995




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    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993