Optimizing the MOCVD growth of InGaAsN has yielded high performance 1.3 /spl mu/m-emitting lasers, displaying reduced temperature sensitivity compared with InP-based structures. Studies reveal the impact of nitrogen on the gain, carrier confinement, and laser characteristics.


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    Titel :

    Characteristics of dilute-nitride quantum well lasers


    Beteiligte:
    Mawst, L.J. (Autor:in) / Yeh, J.-Y. (Autor:in) / Tansu, N. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    1539459 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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