Silicon oxynitride films with varying oxygen/nitrogen ratios have been grown by PECVD using SiH/sub 4/, N/sub 2/O, N/sub 2/ and NH/sub 3/ gases. The refractive index of the film can be smoothly varied by changing the SiH/sub 4//N/sub 2/O flow ratio. Rectangular optical channel waveguides are successfully fabricated by growing a sandwich oxynitride structure together with dry etching. The waveguide propagation loss has been characterized and annealing is shown to be an effective means to reduce the loss significantly. A broader waveguide will also have much smaller loss than a narrow waveguide.
Characterization of PECVD oxynitride optical waveguides
2003-01-01
93366 byte
Conference paper
Electronic Resource
English
Characterization of PECVD oxynitride optical waveguides
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