Vertical-cavity surface-emitting lasers have been integrated onto silicon substrates using a new substrate removal process and low temperature PdGe contacts. A reduction in threshold current of 30% was observed for devices integrated onto silicon.


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    Title :

    InGaAs quantum well vertical-cavity surface-emitting lasers integration onto silicon substrates


    Contributors:

    Published in:

    Proceedings of LEOS'94 ; 1 ; 282-283 vol.1


    Publication date :

    1994-01-01


    Size :

    142401 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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