Vertical-cavity surface-emitting lasers have been integrated onto silicon substrates using a new substrate removal process and low temperature PdGe contacts. A reduction in threshold current of 30% was observed for devices integrated onto silicon.
InGaAs quantum well vertical-cavity surface-emitting lasers integration onto silicon substrates
Proceedings of LEOS'94 ; 1 ; 282-283 vol.1
1994-01-01
142401 byte
Conference paper
Electronic Resource
English
InGaAs Quantum Well Vertical-Cavity Surface-Emitting Lasers Integration onto Silicon Substrates
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