Vertical-cavity surface-emitting lasers have been integrated onto silicon substrates using a new substrate removal process and low temperature PdGe contacts. A reduction in threshold current of 30% was observed for devices integrated onto silicon.


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    Titel :

    InGaAs quantum well vertical-cavity surface-emitting lasers integration onto silicon substrates


    Beteiligte:
    Mathine, D.L. (Autor:in) / Fathollahnejad, H. (Autor:in) / Droopad, R. (Autor:in) / Daryanani, S. (Autor:in) / Maracas, G.N. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 282-283 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    142401 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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