This paper describes the breakdown characteristics of In/sub 0.52/Al/sub 0.48/As-InP heterojunction APDs. This work also calculates the breakdown characteristics triggered by dark counts resulting from thermal generation or trapped carriers in the multiplication region. Finally, an attempt is done to further improve the breakdown probabilities by considering multistage heterojunction APDs.


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    Title :

    Breakdown characteristics of In/sub 0.52/Al/sub 0.48/As-InP heterojunction APDs


    Contributors:
    Oh-Hyun Kwon, (author) / Grine, A. (author) / Haji, A. (author) / Hayat, M.M. (author) / Campbell, J.C. (author) / Saleh, B.E.A. (author) / Teich, M.C. (author)


    Publication date :

    2004-01-01


    Size :

    117107 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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