This paper describes the breakdown characteristics of In/sub 0.52/Al/sub 0.48/As-InP heterojunction APDs. This work also calculates the breakdown characteristics triggered by dark counts resulting from thermal generation or trapped carriers in the multiplication region. Finally, an attempt is done to further improve the breakdown probabilities by considering multistage heterojunction APDs.
Breakdown characteristics of In/sub 0.52/Al/sub 0.48/As-InP heterojunction APDs
2004-01-01
117107 byte
Conference paper
Electronic Resource
English
Breakdown Characteristics of In~0~.~5~2Al~0~.~4~8As-InP Heterojunction APDs
British Library Conference Proceedings | 2004
|British Library Online Contents | 2001
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