This paper describes the breakdown characteristics of In/sub 0.52/Al/sub 0.48/As-InP heterojunction APDs. This work also calculates the breakdown characteristics triggered by dark counts resulting from thermal generation or trapped carriers in the multiplication region. Finally, an attempt is done to further improve the breakdown probabilities by considering multistage heterojunction APDs.
Breakdown characteristics of In/sub 0.52/Al/sub 0.48/As-InP heterojunction APDs
01.01.2004
117107 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Breakdown Characteristics of In~0~.~5~2Al~0~.~4~8As-InP Heterojunction APDs
British Library Conference Proceedings | 2004
|British Library Online Contents | 2001
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