The stray inductance of commutating current paths significantly affects the test results in Double Pulse Test (DPT) of Insulated Gate Bipolar Transistors (IGBT). Thus, precise calculation of stray inductance is crucial for assessing the device performance in DPT. In this study, we firstly analyze the switching transient process of DPT circuits. Then, five typical methods including the traditional differential, polynomial fitting, whole switching process differential, integral and frequency-domain methods are used to extract the stray inductance. To optimize the calculation of current change rate, we further propose an enhanced differential method by employing Sliding Discrete Fourier Transform (SDFT). Finally, the accuracy and practicality of these methods are verified and compared with the Q3D simulation results.
Comparative Analysis of Extraction Methods for Stray Inductance Based on Double Pulse Testing Circuit
2024-10-10
589886 byte
Conference paper
Electronic Resource
English
Limiting the overshoot on IGBT during turn-OFF using stray inductance
Tema Archive | 2011
|Limiting the overshoot on IGBT during turn-OFF using stray inductance
Online Contents | 2011