With limited space for the Power Inverter in Electric and Hybrid Vehicle applications and the cost of the semiconductors, the demand for integration of power electronics has increased. The first way of reducing the room taken by the semiconductors is to increase their efficiency. The losses in IGBT modules are mainly caused by two sources; conduction and switching; and advances in IGBT technology are making improvements in both areas. One of the ways to improve IGBT module switching losses is to accelerate the IGBT turn-ON and turn-OFF transition; with faster IGBT turn-OFF, the overvoltage caused by stray inductance of the module increases so much that the authors need to slow down the turn-OFF to protect the device, thereby impacting efficiency. This paper suggests that they can gain greater efficiency by using the stray inductance of the IGBT module to control the dI/dt during the turn-OFF process without slowing down the dV/dt.


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    Title :

    Limiting the overshoot on IGBT during turn-OFF using stray inductance


    Contributors:
    Cyr, J.M. (author) / El-Yacoubi, M. (author) / Amar, M. (author)


    Publication date :

    2011


    Size :

    9 Seiten, 20 Bilder, 5 Quellen


    Remarks:

    (nicht paginiert)


    Type of media :

    Conference paper


    Type of material :

    Storage medium


    Language :

    English