We have fabricated a monolithic Opto-electronic Integrated Circuit (OEIC) comprising of an InGaAs PIN photodetector and a Common Gate Amplifier (CGA) using Metamorphic High Electron Mobility Transistors (MHEMTs) on 4 inch GaAs substrates. The OEIC shows a gain of 28 dB at 28 GHz with an 8 GHz FWHM.


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    Titel :

    Monolithic InGaAs PIN photodetector-GaAs MHEMT amplifier OEIC fabrication and implementation for 28 GHz LMDS applications


    Beteiligte:
    Joshi, (Autor:in) / Xinde Wang, (Autor:in) / Becker, (Autor:in) / Mohr, (Autor:in)


    Erscheinungsdatum :

    01.01.2002


    Format / Umfang :

    167618 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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