Contact formed on p-type surface of semiconductor laser has several advantages: highly conductive degenerate region and narrow band gap provides surface for good metal-to-semiconductor contact; lattice parameter of GaAs is 5.6533 A; improved lattice match eases interface strain which reduces interface cracking of semiconductor material.


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    Title :

    Semiconductor ohmic contact


    Contributors:

    Published in:

    Publication date :

    1977-03-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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