Contact formed on p-type surface of semiconductor laser has several advantages: highly conductive degenerate region and narrow band gap provides surface for good metal-to-semiconductor contact; lattice parameter of GaAs is 5.6533 A; improved lattice match eases interface strain which reduces interface cracking of semiconductor material.
Semiconductor ohmic contact
NASA Tech Briefs ; 1 , 4
1977-03-01
Miscellaneous
No indication
English
Ohmic contact to GaAs semiconductor
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