Multimetallic layers produce stable, low-resistance contacts for p-type GaAs and p-type GaAlAs devices. Contacts present no leakage problems, and their series resistance is too small to measure at 1 Sun intensity. Ohmic contacts are stable and should meet 20-year-life requirement at 150 C for GaAs combined photothermal/photovoltaic concentrators.


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    Title :

    Ohmic contact to GaAs semiconductor


    Contributors:

    Published in:

    Publication date :

    1980-09-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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