Multimetallic layers produce stable, low-resistance contacts for p-type GaAs and p-type GaAlAs devices. Contacts present no leakage problems, and their series resistance is too small to measure at 1 Sun intensity. Ohmic contacts are stable and should meet 20-year-life requirement at 150 C for GaAs combined photothermal/photovoltaic concentrators.
Ohmic contact to GaAs semiconductor
NASA Tech Briefs ; 5 , 2
1980-09-01
Miscellaneous
No indication
English
NTRS | 1977
|Low Specific Contact Resistivity GaAsSb P-Type Ohmic Contacts for AlGaAs/GaAs Based Devices
British Library Conference Proceedings | 1995
|Formation Of Ohmic Gold Contacts On Epitaxial GaAs
NTRS | 1991
|Ohmic contact to p-type indium phosphide
NTRS | 1980
|Ohmic contact gamma radiation detectors [3768-47]
British Library Conference Proceedings | 1999
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