Contact formed on p-type surface of semiconductor laser has several advantages: highly conductive degenerate region and narrow band gap provides surface for good metal-to-semiconductor contact; lattice parameter of GaAs is 5.6533 A; improved lattice match eases interface strain which reduces interface cracking of semiconductor material.


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    Titel :

    Semiconductor ohmic contact


    Beteiligte:
    Hawrylo, F. Z. (Autor:in) / Kressel, H. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.03.1977



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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