Multimetallic layers produce stable, low-resistance contacts for p-type GaAs and p-type GaAlAs devices. Contacts present no leakage problems, and their series resistance is too small to measure at 1 Sun intensity. Ohmic contacts are stable and should meet 20-year-life requirement at 150 C for GaAs combined photothermal/photovoltaic concentrators.


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    Titel :

    Ohmic contact to GaAs semiconductor


    Beteiligte:
    Hovel, H. J. (Autor:in) / Woodall, J. M. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    01.09.1980



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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