Report describes one-year research effort in VLSL fabrication. Four activities are described: theoretical study of two-dimensional diffusion in SOS (silicon-on-sapphire); setup of sputtering system, furnaces, and photolithography equipment; experiments on double layer metal; and investigation of two-dimensional modeling of MOSFET's (metal-oxide-semiconductor field-effect transistors).


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    Title :

    Progress in MOSFET double-layer metalization


    Contributors:

    Published in:

    Publication date :

    1980-09-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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