28 page report describes experiments in fabrication of integrated circuits with double-layer metalization. Double-layer metalization requires much less silicon "real estate" and allows more flexibility in placement of circuit elements than does single-layer metalization.


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    Title :

    Tests on Double Layer Metalization


    Contributors:
    Woo, D. S. (author)

    Published in:

    Publication date :

    1983-03-01



    Type of media :

    Miscellaneous


    Type of material :

    No indication


    Language :

    English




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