A cost-effective, mixed technology process has been developed that extends the operating range of bipolar integrated circuits into the power integrated circuit regime. The process simultaneously produces CMOS (complementary metal-oxide-semiconductor) logic with a PNP vertical power device. The combination can withstand transients in excess of 85 V and jump start (24 V) and reverse polarity conditions while controlling several amperes of current, making it ideal for automotive applications. Two production devices and a new product that have been developed using the BiMOS (bipolar MOS) process are described: (1) a high-side switch that is used for controlling inductive loads; (2) a transient suppressor used to protect voltage-sensitive electronic components; and (3) a low-side, protected driver.


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    Title :

    Automotive applications of power BiMOS


    Additional title:

    Leistungs-BiMOS-Schaltungen fuer Anwendungen im Kraftfahrzeug


    Contributors:
    Frank, R. (author) / O'Malley, P. (author)


    Publication date :

    1988


    Size :

    5 Seiten, 1 Quelle


    Type of media :

    Conference paper


    Type of material :

    Print


    Language :

    English