Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    High-Frequency Polarization Switching of InGaAsP/InP Diode Lasers with a Special Ridge Structure



    Kongress:

    6th Annual meeting, LEOS '93 ; 1993 ; San Jose; CA


    Erschienen in:

    LEOS '93 ; 516-517


    Erscheinungsdatum :

    01.01.1993


    Format / Umfang :

    2 pages


    Anmerkungen:

    IEEE cat no 93CH3297-9



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    High-Power, Reliable, 730nm-Emitting InGaAsP-Active Region Diode Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    Room Temperature InGaAs-InGaAsP Distributed Feedback Ridge Lasers Operating Beyond 2m

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    InGaAsP-InP Ridge-Wave-guide DBR Lasers with First-Order Surface Gratings Fabricated Using CAIBE

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997


    Novel Passivation Method in the Fabrication of Submicron InGaAsP/InP Ridge Waveguide Lasers

    Lim, E.L. / Teng, J.H. / Chua, S.J. et al. | British Library Conference Proceedings | 2008


    High CW Output Power InGaAs/InGaAsP/InGaP Diode Lasers: Effect of Substrate Misorientation

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995