Uncooled Operation of 1.3 m AlGaInAs/AlInAs/InP Laser Diodes Grown by Solid Source Molecular Beam Epitaxy
Annual meeting; 11th, IEEE: Lasers and Electro-Optics Society; LEOS '98 ; 1998 ; Orlando; FL
01.01.1998
2 pages
IEEE cat no: 98CH36243
Aufsatz (Konferenz)
Englisch
electro-optics , LEOS , IEEE , lasers
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Ultra-High Temperature and Ultra-High Speed Operation of 1.3um AlGaInAs/InP Uncooled Laser Diodes
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