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    Titel :

    Doping effect on concentration dependence of the diffusion coefficient in semiconductors [3890-48]



    Kongress:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    4 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Nr. 3890

    DataCite | 1920


    Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence [3890-36]

    Berchenko, N. N. / Yakovyna, V. S. / Nikiforov, A. Y. et al. | British Library Conference Proceedings | 1999


    advect.3890.out

    Pollinger, Theresa | DataCite | 2022


    Interaction of I-YI group semiconductors with metals [3890-77]

    Tomashik, V. N. / Seritsan, O. V. / Grytsiv, V. I. et al. | British Library Conference Proceedings | 1999


    Pinning of the Fermi level in A^2B^6 semiconductors [3890-56]

    Babentsov, V. N. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999