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    Titel :

    Pinning of the Fermi level in A^2B^6 semiconductors [3890-56]



    Kongress:

    International conference; 4th, Material science and material properties for infrared optoelectronics ; 1998 ; Kiev



    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    6 pages




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Print


    Sprache :

    Englisch




    Nr. 3890

    DataCite | 1920


    advect.3890.out

    Pollinger, Theresa | DataCite | 2022


    Interaction of I-YI group semiconductors with metals [3890-77]

    Tomashik, V. N. / Seritsan, O. V. / Grytsiv, V. I. et al. | British Library Conference Proceedings | 1999


    Doping effect on concentration dependence of the diffusion coefficient in semiconductors [3890-48]

    Monastyrskii, L. S. / Sokolovsky, B. S. / National Academy of Sciences of Ukraine; Institute of Semiconductor Physics | British Library Conference Proceedings | 1999


    Influence of uniaxial pressure on the photoionization of h-centers in semiconductors [3890-33]

    Abramov, A. A. / Akimov, V. I. / Dalakyan, A. T. et al. | British Library Conference Proceedings | 1999