Low-temperature grown GaAs (LT-GaAs) has been studied as a potential material for microwave-photonic devices such as a terahertz (THz) radiation emitter. Since the preparation of the LT-GaAs generally requires a post annealing process at around 600 /spl deg/C, these has been limited to be a small number of the applications combined with other materials. In the present work, we study the photoresponse of amorphous (/spl alpha/-) GaAs prepared at between room temperature and 250 /spl deg/C by femtosecond time-domain reflection pump-probe measurements and photo-induced THz emission measurements.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Terahertz radiation from amorphous GaAs thin film photoconductive switches


    Beteiligte:
    Kiwa, T. (Autor:in) / Kawashima, I. (Autor:in) / Morimoto, M. (Autor:in) / Saijyo, H. (Autor:in) / Nashima, S. (Autor:in) / Yamashita, M. (Autor:in) / Tonouchi, M. (Autor:in) / Hangyo, M. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    156077 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Fabrication of High-Gain GaAs Photoconductive Switches

    Shi, W. / Liang, Z. / Xu, C. | British Library Online Contents | 1998



    Terahertz pulse generation with LT-GaAs photoconductive antenna

    Cui, L. J. / Zeng, Y. P. / Zhao, G. Z. | IEEE | 2006


    2-D electro-optic sampling in GaAs photoconductive switches

    Donaldson, W. / Mu, I. / Jacobs-Perkins, D. et al. | IEEE | 1994


    2-D Electro-Optic Sampling in GaAs Photoconductive Switches

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1994