Low-temperature-grown GaAs (LT-GaAs) of 1-um thickness was grown at 250 °C on semi-insulating GaAs (001) substrate using EPI GEN-II solid-source MBE system. The sample was then in situ annealed for 10 min at 600 °C under As-rich condition. THz emitters were fabricated on this LT-GaAs with three different photoconductive dipole antenna gaps of 1-mm, 3-mm, and 5-mm, respectively. The spectral bandwidth of 2.75 THz was obtaind with time domain spectroscopy. It is found that THz emission efficiency is increased with decreasing antenna gap. Two carrier lifetimes, 0.469 ps and 3.759 ps, were obtained with time-resolved transient reflection-type pump-probe spectroscopy.
Terahertz pulse generation with LT-GaAs photoconductive antenna
01.09.2006
1043691 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Photoconductive terahertz antenna with radial symmetry
IEEE | 2005
|NOVEL TERAHERTZ PHOTOCONDUCTIVE ANTENNAS
British Library Online Contents | 2006
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