Low-temperature-grown GaAs (LT-GaAs) of 1-um thickness was grown at 250 °C on semi-insulating GaAs (001) substrate using EPI GEN-II solid-source MBE system. The sample was then in situ annealed for 10 min at 600 °C under As-rich condition. THz emitters were fabricated on this LT-GaAs with three different photoconductive dipole antenna gaps of 1-mm, 3-mm, and 5-mm, respectively. The spectral bandwidth of 2.75 THz was obtaind with time domain spectroscopy. It is found that THz emission efficiency is increased with decreasing antenna gap. Two carrier lifetimes, 0.469 ps and 3.759 ps, were obtained with time-resolved transient reflection-type pump-probe spectroscopy.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Terahertz pulse generation with LT-GaAs photoconductive antenna


    Beteiligte:
    Cui, L. J. (Autor:in) / Zeng, Y. P. (Autor:in) / Zhao, G. Z. (Autor:in)


    Erscheinungsdatum :

    01.09.2006


    Format / Umfang :

    1043691 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




    Photoconductive terahertz antenna with radial symmetry

    Deibel, J.A. / Escarra, M.D. / Mittleman, D.M. | IEEE | 2005


    Terahertz radiation from amorphous GaAs thin film photoconductive switches

    Kiwa, T. / Kawashima, I. / Morimoto, M. et al. | IEEE | 1999


    NOVEL TERAHERTZ PHOTOCONDUCTIVE ANTENNAS

    Tani, M. / Hirota, Y. / Que, C. T. et al. | British Library Online Contents | 2006


    Generation of ultrabroadband terahertz radiation with a photoconductive emitter

    Tani, M. / Nakajima, M. / Kono, S. et al. | IEEE | 2002