The paper describes the evaluation of devices using "locked-down" VCSEL fabrication process, which includes a more optimal growth condition for the InGaAsN-based active region. From preliminary reliability studies, product requirements, and device performance, designed stress conditions for all the reliability endurance tests are described.


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    Titel :

    Reliability evaluation of 1.3 micron, oxide-apertured, InGaAsN VCSELs


    Beteiligte:
    Naone, R.L. (Autor:in) / Wasinger, N.M. (Autor:in) / Beltran, J.G. (Autor:in) / Chirovsky, L.M.F. (Autor:in) / Rossler, J.M. (Autor:in) / Adamcyk, M. (Autor:in) / Van Hove, J.M. (Autor:in) / Kisker, D.W. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    134404 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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