Time-resolved photoluminescence and induced absorption measurements are used to investigate the ultrafast electronic processes in porous silicon. We observe transients ranging from less than 100 femtoseconds to well in excess of 10 microseconds. They are interpreted in terms of carrier thermalization, trapping and recombination.


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    Titel :

    Ultrafast electronic processes in porous silicon


    Beteiligte:
    Fauchet, P.M. (Autor:in)

    Erschienen in:

    Proceedings of LEOS'94 ; 1 ; 305-306 vol.1


    Erscheinungsdatum :

    01.01.1994


    Format / Umfang :

    151931 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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