We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As/sup +/ ion-implantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have been modelled. Two implantations of As/sup +/ ions at 1.0 MeV and 2.4 MeV were found to produce a uniform distribution of vacancies over the volume of GaAs contributing to THz generation in these devices. We calculate that ion-implantation increases the THz bandwidth of the devices with the cost of decreasing the spectral intensity at lower THz frequencies.


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    Titel :

    Simulation and optimization of arsenic-implanted THz emitters


    Beteiligte:
    Johnston, M.B. (Autor:in) / Lloyd-Hughes, J. (Autor:in) / Casto-Camus, E. (Autor:in) / Fraser, M.D. (Autor:in) / Jagadish, C. (Autor:in)


    Erscheinungsdatum :

    01.01.2004


    Format / Umfang :

    159396 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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